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IXYS Corporation IXF Datasheet

IXYS Corporation IXF

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IXYS Corporation

IXFN55N50 - Power MOSFET

 · 10 Hits • International standard packages • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low...
IXYS Corporation

IXFH12N100F - HiPerRF Power MOSFETs

 · 9 Hits l RF capable MOSFETs l Double metal process for low gate resistance l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rat...
IXYS Corporation

IXFG55N50 - HiPerFET Power MOSFETs ISOPLUS247

 · 9 Hits z z z z z 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS Mounting torque t = 1 min 300 2500 0.4/6 Nm/lb-in z Silicon chip on Direct-Copper-B...
IXYS Corporation

IXFR200N10P - PolarTM HiPerFET Power MOSFET

 · 8 Hits z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab ca...
IXYS Corporation

IXFR24N100 - HiPerFETTM Power MOSFETs

 · 8 Hits • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab ca...
IXYS Corporation

IXFP12N50P - Polar MOSFETs

 · 8 Hits z z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-220 TO-263 (TO-220) 300 260 1.13/10 Nm/lb.in. 4 3 g g z ...
IXYS Corporation

IXFH12N100 - Power MOSFET

 · 7 Hits q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated ...
IXYS Corporation

IXFN80N50 - (IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET

 · 7 Hits • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structu...
IXYS Corporation

IXFP10N60P - Polar MOSFETs

 · 7 Hits z z z 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 (TO-220) 300 ...
IXYS Corporation

IXFH10N100 - Power MOSFET

 · 6 Hits q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated ...
IXYS Corporation

IXFK20N80Q - HiPerFETTM Power MOSFETs Q-Class

 · 6 Hits Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±200 TJ = 25°C TJ = 125°C 25 1 0.42 V ...
IXYS Corporation

IXFH67N10 - (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching

 · 6 Hits ...
IXYS Corporation

IXFC15N80Q - HiPerFET ISOPLUS 220 MOSFET Q-Class Electrically Isolated Back Surface

 · 6 Hits Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capa...
IXYS Corporation

IXFN38N100P - Polar Power MOSFET HiPerFET

 · 6 Hits z z Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 50/60Hz IISOL ≤ 1mA www.DataSheet4U.net 300 260 2500 3000 1.5/13 1.3/...
IXYS Corporation

IXFR20N120P - Polar Power MOSFET HiPerFET

 · 6 Hits • Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 250...
IXYS Corporation

IXFN44N50Q - HiPerFET Power MOSFETs Q-Class

 · 5 Hits • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • Unclamped Inductive Switching (UIS) rated • L...
IXYS Corporation

IXFB38N100Q2 - Power MOSFET

 · 5 Hits z z z z Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to prote...
IXYS Corporation

IXFV26N50P - Avalanche Rated Fast Instrinsic Diode

 · 5 Hits z International standard packages z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to p...
IXYS Corporation

IXFM11N80 - Power MOSFET

 · 5 Hits • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated ...
IXYS Corporation

IXFN44N50 - HiPerFET Power MOSFETs

 · 5 Hits International standard packages Molding epoxies meet UL 94 V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS ...
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