isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

SEMICONDUCTOR IRF150 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 42A, 100Volts DESCRIPTION The Nell IRF150 is a three-terminal s

SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF1010 is a three

Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Ope

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies

PD - 96236A IRF1404ZGPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repet

  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rate

POWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED IRN50-IRN150 IRF150-IRF500 Features and Application

Typical Applications l Industrial motor drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating G l 175°C

PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Swi

isc N-Channel MOSFET Transistor IRF1407，IIRF1407 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.8mΩ ·Enhancement mode ·Fast Switching Spee

  AUIRF1404Z AUTOMOTIVE GRADE AUIRF1404ZS AUIRF1404ZL Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperatur

www.DataSheet4U.com AUTOMOTIVE MOSFET PD - 96040 Features l l l l l l IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF HEXFET® Power MOSFET D Advanced Proce

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operatin

PD -93853C HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switc

PD - 94634B Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A

PD - 94634B Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404Z，IIRF1404Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.7mΩ ·Enhancement