IRF1 Datasheet | Pinout, Features, Price Comparison & PDF

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

SEMICONDUCTOR IRF150 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 42A, 100Volts DESCRIPTION The Nell IRF150 is a three-terminal s

SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF1010 is a three

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies

PD - 96236A IRF1404ZGPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repet

  AUIRF1404Z AUTOMOTIVE GRADE AUIRF1404ZS AUIRF1404ZL Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperatur

Semiconductor July 1998 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Features • 28A and 25

Typical Applications l Industrial motor drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating G l 175°C

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF142 DESCRIPTION ·Drain Current ID=24A@ TC=25℃ ·Drain Source Volt

PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Swi

Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Ope

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance

POWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED IRN50-IRN150 IRF150-IRF500 Features and Application

Public IRF100P219 Final datasheet MOSFET StrongIRFET™ Power MOSFET, 100 V Features • Very low on‑resistance Rds(on) • Excellent gate charge x Rds(on

PD -93853C HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switc

IRF150 Data Sheet March 1999 File Number 1824.3 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF150 DESCRIPTION ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·S

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF120 DESCRIPTION ·Drain Current ID=8A@ TC=25℃ ·Drain Source Volta