| No |
Part Number |
Description |
Manufacture |
PDF |
| 207 |
IRF100 |
(IRF150 - IRF500) 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
POWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IRN50-IRN150 IRF150-IRF500
Features and Applications
Non-inductive, flat shaped aluminum housed wire |
ETC
|
|
| 206 |
IRF100B201 |
Power MOSFET
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier appli |
International Rectifier
|
|
| 205 |
IRF100B202 |
Power MOSFET
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier appli |
International Rectifier
|
|
| 204 |
IRF100S201 |
Power MOSFET
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier appli |
International Rectifier
|
|
| 203 |
IRF101 |
N-Channel Power MOSFETs/ 27 A/ 60-100V
|
Fairchild Semiconductor
|
|
| 202 |
IRF1010 |
N-Channel Power MOSFET
SEMICONDUCTOR
IRF1010 Series
N-Channel Power MOSFET (84A, 60Volts)
D D
RoHS RoHS
Nell High Power Products
DESCRIPTION
The Nell IRF1010 is a three-terminal silicon device with current conduction c |
nELL
|
|
| 201 |
IRF1010E |
Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A
PD - 91670
IRF1010E
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
V |
International Rectifier
|
|
| 200 |
IRF1010EL |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
PD - 91720
IRF1010ES IRF1010EL
l l l l l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rate |
International Rectifier
|
|
| 199 |
IRF1010ELPbF |
HEXFET Power MOSFET
PD - 95444
Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Descripti |
International Rectifier
|
|
| 198 |
IRF1010EPBF |
Power MOSFET
PD - 94965A
IRF1010EPbF
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated |
International Rectifier
|
|
| 197 |
IRF1010ES |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
PD - 91720
IRF1010ES IRF1010EL
l l l l l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rate |
International Rectifier
|
|
| 196 |
IRF1010ESPbF |
HEXFET Power MOSFET
PD - 95444
Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Descripti |
International Rectifier
|
|
