IRF1404 (Inchange Semiconductor)
N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1404,IIRF1404
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.0mΩ ·Enhancement mo
Published:
|
157 views
IRF1010E (International Rectifier)
Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche R
Published:
|
65 views
IRF150 (nELL)
N-Channel Power MOSFET
SEMICONDUCTOR
IRF150 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET 42A, 100Volts
DESCRIPTION
The Nell IRF150 is a three-terminal s
Published:
|
54 views
IRF1010 (nELL)
N-Channel Power MOSFET
SEMICONDUCTOR
IRF1010 Series
N-Channel Power MOSFET (84A, 60Volts)
D D
RoHS RoHS
Nell High Power Products
DESCRIPTION
The Nell IRF1010 is a three
Published:
|
51 views
IRF1407 (International Rectifier)
Power MOSFET
Typical Applications l Industrial Motor Drive
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Ope
Published:
|
45 views
IRF100B201 (International Rectifier)
Power MOSFET
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies
Published:
|
39 views
IRF1404ZGPBF (International Rectifier)
Power MOSFET
PD - 96236A
IRF1404ZGPbF
Features
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repet
Published:
|
39 views
IRF1404Z (International Rectifier)
Power MOSFET
PD - 94634B
IRF1404Z IRF1404ZS IRF1404ZL
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Swi
Published:
|
38 views
AUIRF1404S (Infineon)
Power MOSFET
AUTOMOTIVE GRADE
Features Advanced Planar Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rate
Published:
|
32 views
IRF1404Z (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1404Z,IIRF1404Z
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.7mΩ ·Enhancement
Published:
|
30 views
IRF1010ES (International Rectifier)
Power MOSFET
PD - 91720
IRF1010ES IRF1010EL
l l l l l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operatin
Published:
|
29 views
IRF120 (Fairchild Semiconductor)
N-Channel Power MOSFET
Published:
|
29 views
IRF1405 (International Rectifier)
Power MOSFET
Typical Applications
l Industrial motor drive
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
G
l 175°C
Published:
|
29 views
IRF100 (ETC)
HIGH POWER WIRE WOUND RESISTORS
POWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IRN50-IRN150 IRF150-IRF500
Features and Application
Published:
|
29 views
IRF1404PbF (International Rectifier)
HEXFET Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Published:
|
29 views
IRF100B201 (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF100B201, IIRF100B201
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.2mΩ ·Enhance
Published:
|
29 views
IRF140 (Harris)
N-Channel Power MOSFETs
Semiconductor
July 1998
IRF140, IRF141, IRF142, IRF143
28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs
Features
• 28A and 25
Published:
|
28 views
IRF1404L (International Rectifier)
Power MOSFET
PD -93853C
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switc
Published:
|
27 views
IRF1404ZSPBF (International Rectifier)
POWER MOSFET
www.DataSheet4U.com
AUTOMOTIVE MOSFET
PD - 96040
Features
l l l l l l
IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF
HEXFET® Power MOSFET
D
Advanced Proce
Published:
|
26 views
IRF1405 (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1405,IIRF1405
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.3mΩ ·Enhancement mo
Published:
|
26 views