INCHANGE 2SD Datasheet | Specifications & PDF Download

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION ·High Breakdown Voltage

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Inchange Semiconductor Product Specification www.DataSheet4U.com Silicon NPN Power Transistors 2SD1308 DESCRIPTION ·With TO-220 package ·Low colle

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD363 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CE

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isc Silicon NPN Power Transistor DESCRIPTION ·High speed. ·High breakdown voltage(VCBO=1500V). ·High reliability(Adoption of HVP process). ·Minimum L

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD837 DESCRIPTION ·High DC Current Gain- : hFE= 1000(M

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INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD1850 DESCRIPTION ·High Voltage ·High Switch

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Collector Power Dissipation : PC= 25 W(Max)

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isc Silicon NPN Power Transistor isc Product Specification 2SD1047E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Li

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Inchange Semiconductor Product Specification www.DataSheet4U.com Silicon NPN Power Transistors 2SD1413 DESCRIPTION ·With TO-220Fa package ·High DC

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isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 2000 (Min) @ IC =1 Adc ·

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2.5A ·High Power Dissipation- : PC= 25W@ T

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1802 DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making i

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 DESCRIPTION ·High DC Current Gain- : hFE = 4000(Min)@ IC= 1A ·Collector-

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isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5074 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Hig

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2A ·Good Linearity of hFE ·Wide Area of Sa

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isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·High Curren

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD705 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·100%

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1716 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)C

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isc Silicon NPN Darlington Power Transistor 2SD1071 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum L

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current:: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 3A ·Wide Ar

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