D103
DESCRIPTION
- Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min)
- High Power Dissipation: PC= 25W(Max)@TC=25℃ plement to Type 2SB503
APPLICATIONS
- Designed for audio power amplifier, power switching, DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IE IB
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
VALUE 80
.Data Sheet.net/
UNIT V V V A A A W ℃ ℃
50 10 3 -3 1 25 150 -65~150
PC TJ Tstg isc Website：.iscsemi.cn
Datasheet pdf
- http://..co.kr/
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) VBE(on) ICBO IEBO h FE-1 h FE-2 f T COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base...
