FDG Datasheet | Specifications & PDF Download

Features ● 0.56 inch digit height ● Robust package ● Low power consumption ● Standard configuration: Gray face w/ white segments ● Standard Package: 4

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July 1999 FDG6304P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are pro

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NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor PA102FDG TO-252 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -20 115m ID -

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PA102FDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 115mΩ @VGS = -4.5V ID -10A TO-252 ABSOLUTE MAXIMUM RATINGS (T

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FDG6306P February 2001 FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P -Channel 2.5V specified MOSFET is a rugged g

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FDG6318P January 2003 FDG6318P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode MOSFET are produced

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February 1998 FDG6322C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transist

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w w a D . w S a t e e h U 4 t m o .c PRODUCT SPECIFICATION Approval for Specification only Approval for Pre-production U MONOCHROME LCD MODUL

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w w a D . w S a t e e h U 4 t m o .c PRODUCT SPECIFICATION Approval for Specification only Approval for Pre-production U MONOCHROME LCD MODUL

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www.DataSheet4U.com April 2002 FDG6313N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effe

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FDG1024NZ Dual N-Channel Power Trench® MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ Features „ Max rDS(on) =

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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only www.DataSheet4U.com SURFACE MOUNT LED TAPE AND REEL Pb Lead-Free Parts LURFDGL9553/R5/TR1 DAT

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FDG6322C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produce

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Digital FET, Dual N-Channel FDG6303N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced usin

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435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FDG05 Ge Photodiode --Large Active Area --Low Capacitance Ele

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FDG311N February 2000 FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Sem

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FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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July 1999 FDG6301N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pro

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July 1999 FDG6303N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pro

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