FDG Datasheet | Specifications & PDF Download

PA102FDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 115mΩ @VGS = -4.5V ID -10A TO-252 ABSOLUTE MAXIMUM RATINGS (T

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FDG314P July 2000 FDG314P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistor is produced using Fairc

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Features ● 0.56 inch digit height ● Robust package ● Low power consumption ● Standard configuration: Gray face w/ white segments ● Standard Package: 4

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FDG316P December 2001 FDG316P P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fair

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FDG327N October 2001 FDG327N 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve t

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July 1999 FDG6301N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pro

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w w a D . w S a t e e h U 4 t m o .c PRODUCT SPECIFICATION Approval for Specification only Approval for Pre-production U MONOCHROME LCD MODUL

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DATA SHEET www.onsemi.com MOSFET– Specified, P-Channel, POWERTRENCH) 2.5 V FDG6306P General Description This P−Channel 2.5 V specified MOSFET is a r

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FDG312P FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description Features This P-Channel MOSFET is produced using ON Semiconducto

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FDG332PZ P-Channel PowerTrench® MOSFET FDG332PZ P-Channel PowerTrench® MOSFET -20V, -2.6A, 97m: December 2008 tm Features „ Max rDS(on) = 95m: at

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435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FDG05 Ge Photodiode --Large Active Area --Low Capacitance Ele

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Product Specification Sheet Photodiodes CAUTION ELECTROSTATIC SENSITIVE DEVICE DO NOT HANDLE EXCEPT WITH AN ESD WRIST STRAP AT A STATIC-FREE WORKSTA

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FDG313N July 2000 FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairc

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FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDG328P October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a

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June 1999 FDG6324L Integrated Load Switch General Description This device is intended to be configured as a load switch and is particularly suited fo

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w w a D . w S a t e e h U 4 t m o .c PRODUCT SPECIFICATION Approval for Specification only Approval for Pre-production U MONOCHROME LCD MODUL

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w w a D . w S a t e e h U 4 t m o .c PRODUCT SPECIFICATION Approval for Specification only Approval for Pre-production U MONOCHROME LCD MODUL

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Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0180 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, various com

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DATA SHEET www.onsemi.com MOSFET– Specified, P-Channel, POWERTRENCH) 1.8 V FDG6316P General Description This P−Channel 1.8 V specified MOSFET uses o

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