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FDG6301N-VB
FDG6301N-VB Datasheet
www.VBsemi.com
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.086 at VGS = 4.5 V 0.110 at VGS = 2.5 V 0.180 at VGS = 1.8 V
ID (A)a 2.6a 2.5 a 2.3 a
Qg (Typ.) 5.0 nC
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Trench Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT-363 SC-70
• Load Switch for Portable Applications
D1
D2
S1 1
6 D1
G1
G2
G1 2
5 G2
D2 3
4 S2
Top View
S1
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
20
V
VGS
± 12
TC = 25 °C
2.6a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
2.2a 2.3a, b, c
TA = 70 °C
1.
FDG6301N Datasheet
