DMOS Datasheet | Specifications & PDF Download

TDA7293 120-volt, 100-watt, DMOS audio amplifier with mute and standby Features „ Multipower BCD technology „ Very high operating voltage range (±50

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TDA7294 Datasheet 100 V, 100 W DMOS audio amplifier with mute/st-by MULTIPOWER BCD TECHNOLOGY Multiwatt15V Multiwatt15H Maturity status link TDA72

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® TDA7295 80V - 80W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±40V) DMOS POWER STAGE HIGH OUTPUT POWER (UP TO 80W MUSI

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.

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A4988 DMOS Microstepping Driver with Translator and Overcurrent Protection FEATURES AND BENEFITS ▪ Low Rds(on) outputs ▪ Automatic current decay mode

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® TDA7296S 60V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±30V) DMOS POWER STAGE HIGH OUTPUT POWER (THD = 10%, UP

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Supertex inc. VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease

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VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features ► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► L

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Supertex inc. TP2510 P-Channel Enhancement-Mode Vertical DMOS FET Features ►►Low threshold (-2.4V max.) ►►High input impedance ►►Low input capacita

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® TDA7294S 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±45V) DMOS POWER STAGE HIGH OUTPUT POWER (100W @ THD

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PXFC211507SC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 – 2170 MHz Description The PXFC211507SC is a 150-watt LDMOS FET intended f

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.Data

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VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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m E T E o L O S B .c O – U 4 t e e h P-Channel Enhancement-Mode S Vertical DMOS FETs a t a D Ordering . Information w w w BVDSS / BVDGS -450V -500V †

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TB62003,004,006～009P/F/FW TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB62003P,TB62003F,TB62003FW,TB62004P,TB62004F,TB62004FW,TB62006P TB620

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BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General des

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® SD57030-01 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON S

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0J §upertex inc. VP0104N6/ VP0104N7 VP0106N6/ VP0106N7 Ordering Information BVDSS I BVDGS -40V -SOY *14-pin Side Brazed Ceramic Dip. P-Channel Enhan

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