Cree C4D Datasheet | Specifications & PDF Download

C4D02120E Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Oper

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C4D15120A–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = 1200 V IF TC<135˚C = 20 A Qc = 96 nC Package • • • • • 1

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C4D40120D–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = IF; TC<135˚C 1200 V = 54 A 260 nC Qc = Package • • • •

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C4D20120H Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency

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C4D20120A–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = 1200 V IF = 20 A Qc =130 nC Package • • • • • 1.2kV Schottky R

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C4D15120D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2-KVolt Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency

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C4D15120H Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency

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C4D10120D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM  =  1200 V IF (TC=135˚C) = 18 A** Qc

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C4D20120D Silicon Carbide Schottky Diode VRRM = IF; TC<135˚C 1200 V = 32 A 132 nC Z-Rec™ Rectifier Features Qc = • • • • • 1.2-KVo

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C4D10120H Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency

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C4D02120A ® Silicon Carbide Schottky Diode VRRM = 1200 V IF (TC=135˚C) = 6 A Qc = 12 nC Z-Rec Rectifier Features Package • •

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C4D05120A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = 1200 V IF (TC=135˚C) = 9.5 A Qc = 27 nC • 1.2kV S

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C4D05120E ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 9 A 27 nC Z-Rec Rectifier Features Package •

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C4D08120A ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 11 A 37 nC Z-Rec Rectifier Features Package •

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C4D08120E ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 12 A 37 nC Z-Rec Rectifier Features Package •

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C4D10120A Silicon Carbide Schottky Diode VRRM = 1200 V IF (TC=135˚C) = 14 A Qc = 52 nC Z-Rec™ Rectifier Features Package • •

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C4D10120E Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 16 A Qc = 52 nC • • • •

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C4D30120D–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = IF; TC<135˚C 1200 V = 43 A 192 nC Qc = Package • • • • •

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