Carbide Datasheet | Specifications & PDF Download

0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The

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SCT020HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package TAB Gate (1) Driver source (

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WNSC2D201200W-A Silicon Carbide Diode Rev.01 - 09 September 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO247

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NXPSC08650 Silicon Carbide Diode Rev.02 - 04 November 2019 1. General description Silicon Carbide Schottky diode in a TO220-2L plastic package, design

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WNSC2D06650 Silicon Carbide Diode Rev.01 - 22 June 2021 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO220-2L plast

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C3M0060065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) Features • 3rd Generation SiC

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NXPSC10650D Silicon Carbide Diode 6 March 2019 Product data sheet 1. General description Silicon Carbide Schottky diode designed for high frequency

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SCT011H75G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) F

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WNSC2D04650 Silicon Carbide Diode Rev.01 - 22 June 2021 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO220-2L plast

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WNSC2D201200 Silicon Carbide Diode Rev.01 - 21 June 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO220-2L plas

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NXPSC08650B Silicon Carbide Diode 4 January 2017 Product data sheet 1. General description Silicon Carbide Schottky diode in TO263 (D2PAK) plastic p

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SCTH35N65G2V-7AG Datasheet Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB)

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SCT040H65G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate

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SCT060W75G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 750 V, 60 mΩ typ., 30 A in an HiP247 package Features Order code SCT060W75G3AG

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AIMBG120R030M1 CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET PG-TO263-7-HV-ND5.8 Fea

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WNSC2M40120TB N-Channel Silicon Carbide MOSFET Rev.01 - 19 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TSPAK

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WNSC2D301400W Silicon Carbide Diode Rev.01 - 19 August 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO247-2L p

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ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET FEATURES: Die Inside • Hermetic TO-258 Packaging • 200°C

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NXPLQSC30650W Silicon Carbide Diode Rev.03 - 06 May 2020 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a 3-lead

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NXPSC06650D Silicon Carbide Diode 4 January 2017 Product data sheet 1. General description Silicon Carbide Schottky diode designed for high frequenc

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