Carbide Datasheet | Pinout, Features, Price Comparison & PDF

WNSC6D20650CW Silicon Carbide Diode Rev.02 - 22 May 2023 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a 3-lead T

0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The

G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

WNSC2D021200MB Silicon Carbide Diode Rev.01 - 16 August 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a SMB plast

SCT1000N170 Datasheet Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZen

WAS175M12BM3, 5 WAS175M12BM3T 1200 V, 175 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

WNSC2M60120R-A N-Channel Silicon Carbide MOSFET Rev.01 - 13 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO24

ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet SC3D20120D Silicon Carbide Schottky Barrier Diode Features Applications  1200-Vol t Schottky Re

MSC020SDA120B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line

650V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆650V Schottky rectifier ◆Zero reverse recovery current/voltage ◆High frequency operation ◆Swi

WNSC2D201200CW Silicon Carbide Diode Rev.02 - 13 June 2024 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a 3-lea

WNSC2M12120R N-Channel Silicon Carbide MOSFET Rev.01 - 24 November 2023 Product data sheet 1. General description Silicon Carbide MOSFET in a TO247-

G3R40MT12D 1200 V 40 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

C3M0021120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High bl

WNSC2D051200D Silicon Carbide Diode Rev.01 - 21 June 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO252 (DPAK)

WNSC5D08650D Silicon Carbide Diode Rev.01 - 10 October 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO252 (DPA

WNSC2M150120B7 N-Channel Silicon Carbide MOSFET Rev.01 - 29 November 2023 Product data sheet 1. General description Silicon Carbide MOSFET in a TO26

C4D05120A 4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Ba

IMWH170R450M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V at