BELLING BLM Datasheet | Specifications & PDF Download

Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET Description The BLM8205A uses advanced trench technology to provide excellent RDS(O

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Pb Free Product BLM9435A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM9435A uses advanced trench technology to provide excellent RDS(ON

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Pb Free Product BLM8205 N-Channel Enhancement Mode Power MOSFET Description The BLM8205 uses advanced trench technology to provide excellent RDS(ON)

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Pb Free Product BLM3415 P-Channel Enhancement Mode Power MOSFET Description The BLM3415 uses advanced trench technology to provide excellent RDS(ON)

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N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM2006NE Description The BLM2006NE uses advanced trench technology to provide excellent RDS

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Green Product BLM22N10 100V N-Channel Power MOSFET DESCRIPTION The BLM22N10 uses advanced trench technology to provide excellent RDS(ON), low gate c

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Pb Free Product BLM7002 N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10

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ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET Description The BLM2010E uses advanced trench technology to provide excellent RDS(ON),

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Green Product BLM04N06 60V N-Channel Power MOSFET DESCRIPTION The BLM04N06 uses advanced trench technology to provide excellent RDS(ON), low gate ch

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Green Product BLM04N08 80V N-Channel Power MOSFET DESCRIPTION The BLM04N08 uses advanced trench technology to provide excellent RDS(ON), low gate ch

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BLM8811 12V, 21A, 5.5mΩ, Dual N-Channel Power MOSFET Features  2.5V drive  Internal protection diode  Common-drain type Applications  Lithium-ion

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Pb Free Product BLM2305 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM2305 uses advanced trench technology to provide excellent RDS(ON),

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Pb Free Product BLM3407A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3407A uses advanced trench technology to provide excellent RDS(ON

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BLM9435 P-Channel Enhancement Mode MOSFET FEATURES VDS VGS －30V ±20V RDSon TYP 51mR@-10V 68mR@-4V5 ID －5.4A DESCRIPTION This device is produced

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Pb Free Product BLM138K N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10

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Pb Free Product BLM7002K N-Channel Enhancement Mode Power MOSFET General Features ● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V

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Pb Free Product BLM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM2301 uses advanced trench technology to provide excellent RDS(ON),

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Pb Free Product BLM2004NE N-Channel Enhancement Mode Power MOSFET Description The BLM2004NE uses advanced trench technology to provide excellent RDS

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Pb Free Product BLM2008E N-Channel Enhancement Mode Power MOSFET Description The BLM2008E uses advanced trench technology to provide excellent RDS(ON

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ROHS Product BLM2304 N-Channel Enhancement Mode Power MOSFET Description The BLM2304 uses advanced trench technology to provide excellent RDS(ON) an

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