BD1 Datasheet | Pinout, Features, Price Comparison & PDF

BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem

BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem

BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features ■ Products are pre-selected in DC current gain Application ■ General purpos

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min

10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139

BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem

BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(M

PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−F

PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−F

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 65V(Min) ·Minimum Lot-to-Lot variations for robust dev

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD141 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(B

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD142 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Low collecto

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD162 DESCRIPTION ·Continuous Collector Current -IC= 4A ·Excellent Safe Operating Area ·Good

PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−F

SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech

OEM:Valvo Transistor BD124 Datasheet Silicon NPN Transistor BD124 45V / 4A DATASHEET OEM – Valvo Source: Valvo Datenbuch Dioden und Transistoren

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12