BD1 Datasheet | Specifications & PDF Download

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1

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BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features ■ Products are pre-selected in DC current gain Application ■ General purpos

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BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem

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BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem

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BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min

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PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−F

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor August 2013 BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136,

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 65V(Min) ·Minimum Lot-to-Lot variations for robust dev

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor August 2013 BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136,

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor August 2013 BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136,

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isc Silicon NPN Power Transistor BD135 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)=

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BD130 S w w w .D a t a h t e e 4U . m o c NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS The BD130 is a silicon epitaxial-

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD132 www.datasheet4u.com DESCRIPTION ·Complement to type BD131 ·With

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OEM:Valvo Transistor BD124 Datasheet Silicon NPN Transistor BD124 45V / 4A DATASHEET OEM – Valvo Source: Valvo Datenbuch Dioden und Transistoren

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12

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isc Silicon PNP Power Transistor INCHANGE Semiconductor BD140 DESCRIPTION ·DC Current Gain- : hFE= 63(Min)@ IC= -0.15A ·Collector-Emitter Sustaining

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BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rati

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10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD141 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(B

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