5N60 Datasheet | Specifications & PDF Download

www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 5N60 ·DESCRIPTION ·Drain Current ID= 5.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fa

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IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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Free Datasheet http://www.Datasheet4U.com FHF5N60 FHF5N60 N MOS 。AC-DC ， DC-DC，HPMW。 ★ 5A,600V，RDS(on)(）1.97Ω ★ 、 ★ （TC =25℃） — @TC=25℃ @TC=

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Shanghai Jin-ec Electronic& Technology Co., Ltd JHW5N60 N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID  A VDSS 600 V

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UNISONIC TECHNOLOGIES CO., LTD 15N60 15 Amps, 600 Volts N-CHANNEL MOSFET „ DESCRIPTION Preliminary Power MOSFET The UTC 15N60 is an N-channel mode

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FQP15N60/FQPF15N60 600V 15A Super Junction MSFET General Description Product Summary The FQP15N60& FQPF15N60 have been fabricated using the advance

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UNISONIC TECHNOLOGIES CO., LTD 05N60-CB Preliminary 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 05N60-CB is a high voltage MOSFET and

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 600 V 600 V ID25 15 A

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Shanghai Jin-ec Electronic& Technology Co., Ltd JHW5N60 N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID  A VDSS 600 V

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N R N-CHANNEL MOSFET JCS5N60C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.5Ω Qg 9nC    LED APPLICATIONS  High fr

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Elektronische Bauelemente SSQ105 60SG 105A, 60V, RDS(O ) 5.3mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h

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IXKH 35N60C5 COOLMOS® * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D G S ID25 = 35 A VDSS = 600

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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MOSFET - Power, Single N-Channel SuperFET) V, FRFET), D2PAK 600 V, 55 mW, 45 A NVB055N60S5F Description The SUPERFET V MOSFET FRFET series has optimi

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www.vishay.com SiHG105N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode D TO-247AC G S D G S N-Channel MOSFET PRODUCT SUMMARY

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FGP15N60UNDF 600 V, 15 A Short Circuit Rated IGBT FGP15N60UNDF 600 V, 15 A Short Circuit Rated IGBT Features • Short Circuit Rated 10us • High Curren

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IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V C

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IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V C

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