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5N60 - N-Channel MOSFET Transistor

General Description

Drain Current ID= 5.6A@ TC=25℃ Drain Source Voltage : VDSS= 600V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC Adapter, Battery Charge and SMPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARA

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 5N60 ·DESCRIPTION ·Drain Current ID= 5.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·AC Adapter, Battery Charge and SMPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5.6 A ID(puls) Pulse Drain Current 20 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.