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5N65 - N-Channel MOSFET Transistor

Key Features

  • Drain Current ID= 5A@ TC=25℃.
  • Drain Source Voltage : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @VGS = 10 V.
  • Avalanche Energy Specified.
  • Fast Switching.
  • Simple Drive Requirements.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 5N65 ·FEATURES ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @VGS = 10 V ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Plused 20 A PD Total Dissipation @TC=25℃ 100 W Tj Max.