5N120 Datasheet | Specifications & PDF Download

SEMICONDUCTOR TECHNICAL DATA KGH25N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a

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Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, ty

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Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body Diode for soft-switching IHW15N120E1 Data sheet Industrial Power Control

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Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body Diode for soft-switching IHW25N120E1 Data sheet Industrial Power Control

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www.DataSheet4U.com VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES

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FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT November 2013 FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Tem

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Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B S Series - Improved SCSOA Capability VCES IC25 VCE(sat) =1200 V = 30

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N N-CHANNEL IGBT R TT015N120EQ MAIN CHARACTERISTICS Package IC VCES VCESAT-TYP 15A 1200V 1.60V  APPLICATIONS  General purpose inverter

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FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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High Voltage IGBT with Diode Short Circuit SOA Capability Preliminary data sheet Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) tSC (SCSOA) P

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High Voltage IGBT with Diode Short Circuit SOA Capability Preliminary data sheet Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) tSC (SCSOA) P

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SGH15N120RUF SGH15N120RUF Short Circuit Rated IGBT IGBT General Description Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) pr

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Si

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode D

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHPM6B10N120/D Hybrid Power Module Integrated Power Stage for 460 VAC Motor Drives The

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Features • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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www.DataSheet4U.com Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1 (D1) VCES = 1200 V IC25 = 70 A

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IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching se

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • Ro

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