Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, ty

IGBT Features  1200V,15A  VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • Ro

IGBT Features  1200V,15A  VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

Soft Switching Series IHW15N120R q C Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low for

www.DataSheet.co.kr SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous gene

www.DataSheet4U.com VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW15N120H3 1200V high speed switching

KDG25N120H1 IGBT Features  1200V,25A,VCE(sat)(typ.)=2.5V@VGE=15V  High speed switching  Higher system efficiency  Soft current turn-off waveforms

FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT November 2013 FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Tem

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

HM15N120AT IGBT Features  1200V,15A  VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off w

UNISONIC TECHNOLOGIES CO., LTD 5N120 5A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and opera

SEMICONDUCTOR TECHNICAL DATA KGH15N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a

MOSFETs Silicon Carbide N-Channel MOS TW015N120C TW015N120C 1. Applications • Switching Voltage Regulators 2. Features (1) Chip design of 3rd genera

FGA25N120AND IGBT FGA25N120AND General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching lo

HMM65N120T Silicon Carbide Power MOSFET N-cNh-acnhnanenl eElnEhnahnacnecmemeennt tMMooddee Features • 3rd generation SiC MOSFET technology • High b

Type Package HMM165N120T4 TO247-4L VDS IDS （Tc=25℃,Rth(j-c,max)） RDS(ON),typ (VGS=18V,ID=100A,Tj=25℃) Tj,max 1200V 150A 13mΩ 175℃ Features  High-

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT April 2013 FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT Features • N