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4N65

4N65 dataSheet

PINGWEI

4N65F - N-Channel MOSFET

· 7 Hits  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 4N65 IT...
Huajing Microelectronics

CS4N65FA9R - Silicon N-Channel Power MOSFET

· 5 Hits l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single ...
Jingdao

CM4N65C - POWER MOSFET

· 5 Hits ...
Oucan Semi

FQP4N65 - 4A N-Channel MOSFET

· 5 Hits 5°C Power Dissipation B Derate above 25oC PD 104 0.83 35 0.28 Junction and Storage Temperature Range Maximum lead temperature for soldering purpos...
Vanguard Semiconductor

VS4N65AI - N-Channel Advanced Power MOSFET

· 4 Hits  N-Channel,10V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=10 V  Fast Switching  Pb-free lead plating; RoHS compliant ...
INCHANGE

FIR4N65F - N-Channel MOSFET

· 4 Hits ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·Avalanche Energy Spe...
UNISONIC TECHNOLOGIES

4N65Z - 40A 650V N-CHANNEL POWER MOSFET

· 3 Hits * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast...
Maple Semiconductor

SLF4N65UZ - N-Channel MOSFET

· 3 Hits - 4A, 650V, RDS(on)typ = 2.32Ω@VGS = 10 V - Low gate charge ( typical 10.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv...
GME

BL4N65 - N-Channel Power Mosfet

· 3 Hits  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )  F...
Huajing Microelectronics

CS4N65FA9R-G - Silicon N-Channel Power MOSFET

· 3 Hits l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single ...
JCET

CJPF04N65A - N-Channel MOSFET

· 3 Hits z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-220F...
JCET

CJPF04N65 - N-Channel MOSFET

· 3 Hits z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified MARKING ...
JCET

CJP04N65 - N-Channel MOSFET

· 3 Hits z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified MARKING ...
IPS

ITU04N65R - N-Channel MOSFET

· 3 Hits ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART N...
Potens semiconductor

PDF04N65L - N-Channel MOSFETs

· 3 Hits  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available ID 4A TO126 Pin Configuration D GDS G S Applications...
Wing On

PFU4N65EG - N-Channel MOSFET

· 3 Hits  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics ...
Wing On

PFD4N65EG - N-Channel MOSFET

· 3 Hits  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics ...
Wing On

PFU4N65FG - N-Channel MOSFET

· 3 Hits  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics ...
Wing On

PFD4N65FG - N-Channel MOSFET

· 3 Hits  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics ...
Wing On

PFF4N65F - N-Channel MOSFET

· 3 Hits  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics ...
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