4N65 Datasheet | Pinout, Features, Price Comparison & PDF

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot

SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is

4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava

N R N-CHANNEL MOSFET JCS4N65F MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson（Vgs=10V） 2.8Ω Qg 27nC   LED APPLICATIONS  High effi

www.vishay.com SiHG24N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC

FQP4N65/FQPF4N65 650V,4A N-Channel MOSFET General Description Product Summary The FQP4N65 & FQPF4N65 have been fabricated using an advanced high vo

FQD4N65/FQI4N65/FQU4N65 650V,4A N-Channel MOSFET General Description Product Summary The FQD4N65& FQI4N65 & FQU4N65 have been fabricated using an a

4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava

4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced u

ITA04N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 2.4Ω ID 4A Features: ●

SVF4N65CAF/D/M/MJ/MN/K _Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS fiel

Wisdom Semiconductor WFF4N65 N-Channel MOSFET Features ■ RDS(on) (Max 2.7 Ω )@VGS=10V ■ Gate Charge (Typical 15nC) ■ Improved dv/dt Capability, Hig

HM4N65 / HM4N65F HM4N65 / HM4N65F 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMO

N-Channel Super Junction Power MOSFET Ċ RM4N650T2 RM4N650HD RM4N650TI General Description The series of devices use advanced super junction technolo

650V N-Channel MOSFETs PDF04N65L General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technol

UNISONIC TECHNOLOGIES CO., LTD 4N65 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better

N-Channel Super Junction Power MOSFET Ċ RM4N650T2 RM4N650HD RM4N650TI General Description The series of devices use advanced super junction technolo

SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transi

UNISONIC TECHNOLOGIES CO., LTD 14N65-TC 14A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 14N65-TC are N-Channel enhancement mode power field

4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava