FQD4N65
Description
Product Summary
The FQD4N65& FQI4N65 & FQU4N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested! 100% Rg Tested!
700V@150℃ 4A < 2.3Ω
TO252 DPAK
Top View
Bottom View
Top View
TO251A IPAK Bottom View
TO251
Top View
Bottom View
AOD4N60
AOI4N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
IDM IAR...
