STL40N10F7 N-channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal s

40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

STP40N10 STP40N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N10 STP40N10FI VDSS 100 V 100 V R DS( on) < 0.04 Ω < 0.04 Ω ID 40

STP40N10 STP40N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N10 STP40N10FI VDSS 100 V 100 V R DS( on) < 0.04 Ω < 0.04 Ω ID 40

40N10-VB TO252 40N10-VB TO252 Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS =

HMS40N10D N-Channel Super Trench Power MOSFET Description The HMS40N10D uses Super Trench technology that is uniquely optimized to provide the most e

40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 40N10 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Stat

40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

RU140N10R N-Channel Advanced Power MOSFET Features • 100V/140A RDS (ON)=6.5mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Low Gate Charge • Fast Swit

PolarHVTM HiPerFET IXFH 140N10P Power MOSFETs IXFT 140N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated V DSS ID25 RDS(on) trr

AP40N10NF 100V N-Channel Enhancement Mode MOSFET Description The AP40N10NF uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate c

HMS40N10KA N-Channel Super Trench Power MOSFET Description The HMS40N10KA uses Super Trench technology that is uniquely optimized to provide the most

STU40N10 Sa mHop Microelectronics C orp. STD40N10Green Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMM

isc N-Channel MOSFET Transistor FQA140N10 FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-

AP40N10D 100V N-Channel Enhancement Mode MOSFET Description The AP40N10D uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate cha

AP240N10BPIT 100V N-Channel Enhancement Mode MOSFET Description The AP240N10BP/T uses advanced APM-SGTⅠ technology to provide excellent RDS(ON), low g

FDBL0240N100 N-Channel PowerTrench® MOSFET FDBL0240N100 N-Channel PowerTrench® MOSFET 100 V, 210 A, 2.8 mΩ Features „ Max RDS(on) = 2.8 mΩ at VGS =

Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica