40N10 Datasheet | Specifications & PDF Download

40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 40N10 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Stat

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www.din-tek.jp DT81 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40

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40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

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() CRST040N10N, CRSS037N10N SkyMOS1 N-MOSFET 100V, 3.3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

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www.din-tek.jp DT81 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40

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isc N-Channel MOSFET Transistor FQA140N10 FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-

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40N10-VB TO252 40N10-VB TO252 Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS =

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AP140N10FIPIT 100V N-Channel Enhancement Mode MOSFET Description The AP140N10P/T uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low

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40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

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FQH140N10 QFET FQH140N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using

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STL40N10F7 N-channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal s

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DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 100 V, 38 mW, 21 A NVMFS040N10MCL V(BR)DSS 100 V RDS(ON) MAX 38 mW @ 10 V 53 mW @ 4.5 V

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UNISONIC TECHNOLOGIES CO., LTD USG40N10 Preliminary 48A, 100V N-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC USG40N10 is a N-channel P

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IAUZ40N10S5L120 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level

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AP240N10BPIT 100V N-Channel Enhancement Mode MOSFET Description The AP240N10BP/T uses advanced APM-SGTⅠ technology to provide excellent RDS(ON), low g

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BSC040N10NS5SC MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Dual-side cooled package with lowest Junction-top thermal resistance • 175°C rat

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RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 File Number 2431.3 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFE

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PolarHVTM HiPerFET IXFH 140N10P Power MOSFETs IXFT 140N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated V DSS ID25 RDS(on) trr

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