W29C020 (Winbond)
256K x 8 CMOS FLASH MEMORY
W29C020
256K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The devi
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27C4002 (STMicroelectronics)
4 Mbit 256Kb x16 UV EPROM and OTP EPROM
M27C4002
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu
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AAA1M304 (NMB Technologies)
Fast Page Mode CMOS 256K x 4 DRAM
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29F200 (STMicroelectronics)
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
M29F200BT M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
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SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM
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HY514264B (Hynix Semiconductor)
256K x 16 Extended Data Out Mode DRAM
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BL24C256A (BELLING)
256K-Bits EEPROM
BL24C256A 256K bits (32768×8)
Features
⚫ Compatible with all I2C bidirectional data transfer protocol
⚫ Memory array: – 256 Kbits (32 Kbytes) of EEPRO
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UPD424256 (NEC Electronics)
256K x 4-Bit CMOD DRAM
www.DataSheet4U.com
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R1EX24256ASAS0I (Renesas Technology)
Two-wire serial interface 256k EEPROM
R1EX24256ASAS0I R1EX24256ATBS0I
Two-wire serial interface 256k EEPROM (32-kword × 8-bit)
REJ03C0327-0001 Preliminary Rev.0.01 Jan. 10, 2008
www.DataS
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FM1808B (Ramtron)
256Kb Bytewide 5V F-RAM Memory
www.DataSheet.co.kr
Preliminary
FM1808B
256Kb Bytewide 5V F-RAM Memory
Features
256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits
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HT6025 (Hi-TrendTechnology)
high-performance low-power smart meters dedicated MCU 256K chip
HT6X2X
HT6X2X
Tel: 021-51035886 Fax: 021-50277833
Email: sales@hitrendtech.com Web: http://www.hitrendtech.com
http://www.hitrendtech.com
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AS4C1259 (Austin Semiconductor)
256K x 1 DRAM
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MB84256A-10L (Fujitsu)
CMOS 256K bit Low Power SRAM
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W29C020C (Winbond)
256K x 8 CMOS FLASH MEMORY
W29C020C
256K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C020C is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The de
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27C256 (Microchip Technology)
256K (32K x 8) CMOS EPROM
Obsolete Device
27C256
256K (32K x 8) CMOS EPROM
FEATURES
• High speed performance
- 90 ns access time available
• CMOS Technology for low power
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MPC2005 (Motorola)
256KB and 512KB BurstRAM
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPC2004/D
Advance Information
256KB and 512KB BurstRAM™ Secondary Cache Modules for P
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MB85RS256B (Fujitsu)
256K (32K x 8) Bit SPI
FUJITSU SEMICONDUCTOR DATA SHEET
Memory FRAM
DS501-00021-2v0-E
256 K (32 K × 8) Bit SPI
MB85RS256B
■ DESCRIPTION
MB85RS256B is a FRAM (Ferroelectri
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HT6027 (Hi-TrendTechnology)
high-performance low-power smart meters dedicated MCU 256K chip
HT6X2X
HT6X2X
Tel: 021-51035886 Fax: 021-50277833
Email: sales@hitrendtech.com Web: http://www.hitrendtech.com
http://www.hitrendtech.com
() Page
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HM62256B (Hitachi Semiconductor)
256k SRAM (32-kword x 8-bit)
HM62256B Series
256k SRAM (32-kword × 8-bit)
ADE-203-135F (Z) Rev. 6.0 Nov. 13, 1997 Description
The Hitachi HM62256B Series is a CMOS static RAM org
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M27C4002 (STMicroelectronics)
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
M27C4002
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
Feature summary
■ 5V ± 10% Supply voltage for Read operations
■ Access time: 45ns
■ Low Power c
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HY29F400BT55 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
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