27C4002 (STMicroelectronics)
4 Mbit 256Kb x16 UV EPROM and OTP EPROM
M27C4002
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu
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29F200 (STMicroelectronics)
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
M29F200BT M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
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SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM
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AAA1M304 (NMB Technologies)
Fast Page Mode CMOS 256K x 4 DRAM
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HY514264B (Hynix Semiconductor)
256K x 16 Extended Data Out Mode DRAM
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AS4C1259 (Austin Semiconductor)
256K x 1 DRAM
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MB81C4256A (Fujitsu Media Devices)
256K x 4-Bit Fast Page Mode Low Power DRAM
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HT6027 (Hi-TrendTechnology)
high-performance low-power smart meters dedicated MCU 256K chip
HT6X2X
HT6X2X
Tel: 021-51035886 Fax: 021-50277833
Email: sales@hitrendtech.com Web: http://www.hitrendtech.com
http://www.hitrendtech.com
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W29C020 (Winbond)
256K x 8 CMOS FLASH MEMORY
W29C020
256K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The devi
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HT6025 (Hi-TrendTechnology)
high-performance low-power smart meters dedicated MCU 256K chip
HT6X2X
HT6X2X
Tel: 021-51035886 Fax: 021-50277833
Email: sales@hitrendtech.com Web: http://www.hitrendtech.com
http://www.hitrendtech.com
（） Page
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IS61LV25616AL (Integrated Silicon Solution Inc)
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61LV25616AL
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
• High-speed access time: — 10, 12 ns • CMOS low power opera
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SRM20256L (S-MOS Systems)
CMOS 256K-Bit Static RAM
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MB81C81A (Fujitsu Media Devices)
CMOS 256K-BIT HIGH-SPEED SRAM
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AS4C1259883C (Austin Semiconductor)
256K x 1 DRAM
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BL24C256A (BELLING)
256K-Bits EEPROM
BL24C256A 256K bits (32768×8)
Features
⚫ Compatible with all I2C bidirectional data transfer protocol
⚫ Memory array: – 256 Kbits (32 Kbytes) of EEPRO
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AT28C256 (ATMEL Corporation)
256K (32K x 8) Paged Parallel EEPROM
Features
• Fast Read Access Time – 150 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes – Internal Control Timer •
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MT4067-P (Micron)
256K x 1 DRAM
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MPC2005 (Motorola)
256KB and 512KB BurstRAM
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPC2004/D
Advance Information
256KB and 512KB BurstRAM™ Secondary Cache Modules for P
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MB84256-10LP (ETC)
CMOS 256K SRAM
www.DataSheet4U.com
MB84256-10LP IL08
C-MOS 256 K (32,768WORD x 8)-BIT SRAM
—TOP VIEW—
10 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 WE CS OE
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HN58C256A (Hitachi Semiconductor)
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function
HN58C256A Series HN58C257A Series
256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58C257A)
ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Desc
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IS61C25616AS (Integrated Silicon Solution)
256K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C25616AL IS61C25616AS IS64C25616AL IS64C25616AS
256K x 16 HIGH-SPEED CMOS STATIC RAM
FEATURES HIGH SPEED: (IS61/64C25616AL)
• High-speed access t
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