27C4002 (STMicroelectronics)
4 Mbit 256Kb x16 UV EPROM and OTP EPROM
M27C4002
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu
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29F200 (STMicroelectronics)
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
M29F200BT M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM
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AAA1M304 (NMB Technologies)
Fast Page Mode CMOS 256K x 4 DRAM
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W29C020 (Winbond)
256K x 8 CMOS FLASH MEMORY
W29C020
256K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The devi
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AS4C1259 (Austin Semiconductor)
256K x 1 DRAM
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HY514264B (Hynix Semiconductor)
256K x 16 Extended Data Out Mode DRAM
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SRM20256L (S-MOS Systems)
CMOS 256K-Bit Static RAM
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HT6027 (Hi-TrendTechnology)
high-performance low-power smart meters dedicated MCU 256K chip
HT6X2X
HT6X2X
Tel: 021-51035886 Fax: 021-50277833
Email: sales@hitrendtech.com Web: http://www.hitrendtech.com
http://www.hitrendtech.com
（） Page
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MB81C4256A (Fujitsu Media Devices)
256K x 4-Bit Fast Page Mode Low Power DRAM
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AS4C1259883C (Austin Semiconductor)
256K x 1 DRAM
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AS9C25512M2018L (Alliance Semiconductor Corporation)
2.5V 512/256K x 18 Synchronous Dual-port SRAM
September 2004 Preliminary Information
®
AS9C25512M2018L AS9C25256M2018L
www.DataSheet4U.com
2.5V 512/256K X 18 Synchronous Dual-port SRAM with 3.3V
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SRM2A256LLMX (EPSON)
256K Bit Static RAM
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HT6025 (Hi-TrendTechnology)
high-performance low-power smart meters dedicated MCU 256K chip
HT6X2X
HT6X2X
Tel: 021-51035886 Fax: 021-50277833
Email: sales@hitrendtech.com Web: http://www.hitrendtech.com
http://www.hitrendtech.com
（） Page
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BL24C256A (BELLING)
256K-Bits EEPROM
BL24C256A 256K bits (32768×8)
Features
⚫ Compatible with all I2C bidirectional data transfer protocol
⚫ Memory array: – 256 Kbits (32 Kbytes) of EEPRO
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IS61LV25616AL (Integrated Silicon Solution Inc)
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61LV25616AL
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
• High-speed access time: — 10, 12 ns • CMOS low power opera
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MPC2005 (Motorola)
256KB and 512KB BurstRAM
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPC2004/D
Advance Information
256KB and 512KB BurstRAM™ Secondary Cache Modules for P
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M5M5256KP (Mitsubishi Electric)
(M5M5256xP) CMOS Sraric RAM
( DataSheet : www.DataSheet4U.com )
www.DataSheet4U.com
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AS4C4256883C (Austin Semiconductor)
256K x 4 DRAM
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MB84256A-10L (Fujitsu)
CMOS 256K bit Low Power SRAM
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M5M4256P-12 (Mitsubishi)
256K-Bit DRAM
MITSUBISHI LSls
M5M4256P-12, -15, -20
262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM
DESCRIPTION
This is a fami Iy of 262 144-word by 1-bit dynamic
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