1N0 Datasheet | Specifications & PDF Download

FTP11N08A N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier Features: • RoHS Compliant • Low ON Resistance • Low Gat

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FTP11N08 N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier • RoHS Compliant • Low ON Resistance • Low Gate Charge • P

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IQFH61N06NM5 MOSFET OptiMOSTM5 Power-Transistor, 60 V Features • Optimized for Low Voltage Drives applications • Optimized for Battery Powered applic

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ISC011N06LM5 MOSFET OptiMOSTM5 Power-Transistor, 60 V Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal p

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Public ISC031N08NM6SC Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 80 V Features • Dual‑side cooled package with lowest Junction‑top thermal

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MOSFET – Power, Single N-Channel 40 V, 12 mW, 35 A NVMYS011N04C Features  Small Footprint (5x6 mm) for Compact Design  Low RDS(on) to Minimize Cond

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() CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 mW, 201 A NTMFS2D1N08X Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Mini

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XTR1N0400 High Temperature 40V Diode Family Rev 4 – November 2023 (DS-00172-12) Data Sheet PRODUCTION XTRPPPPP YYWWANN DIP8 XTR1N0415 XTR1N0450 XTR

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() Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • AEC-Q101 Qualified

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.1mΩ ID 100A G UIS, Rg 100% Tested

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ISC031N08NM6 MOSFET OptiMOSTM 6 Power-Transistor, 80 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x

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GOFORD DESCRIPTION The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

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() CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(o

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() CRSM011N04N6Q SkyMOS6 N-MOSFET 40V, 0.85mΩ, 290A Features • Uses CRM(CQ) advanced SkyMOS6 technology • Extremely low on-resistance RDS(on) • Exce

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPB031N08N5 Data Sheet Rev. 2.0 Final Power Manage

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Isc N-Channel MOSFET Transistor IPB031N08N5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance

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ISC011N03L5S MOSFET OptiMOSTM Power-MOSFET, 30 V Features • Optimized for high performance Buck converter • Very low on-resistance RDS(on) @ VGS=4.5

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