HT6019 (Hi-TrendTechnology)
low-power single-phase smart meters dedicated to 128K chip MCU
HT6X1X
HT6X1X
Tel: 021-51035886 Fax: 021-50277833
Email: sales@hitrendtech.com Web: http://www.hitrendtech.com
http://www.hitrendtech.com
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2716 (STMicroelectronics)
NMOS 128K 16K x 8 UV EPROM
www.DataSheet4U.com
M2716
NMOS 16K (2K x 8) UV EPROM
2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is
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29F200 (STMicroelectronics)
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
M29F200BT M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM
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27C1001 (STMicroelectronics)
1 Mbit 128Kb x8 UV EPROM and OTP EPROM
M27C1001
1 Mbit (128Kb x8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Curre
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CY62128EV30 (Cypress Semiconductor)
1-Mbit (128K x 8) Static RAM
CY62128EV30 MoBL®
1-Mbit (128K × 8) Static RAM
1-Mbit (128K × 8) Static RAM
Features
■ Very high speed: 45 ns
■ Temperature ranges: ❐ Industrial: –40
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27128 (STMicroelectronics)
NMOS 128K 16K x 8 UV EPROM
M27128A
NMOS 128K (16K x 8) UV EPROM
FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5 V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL CO
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W29C010 (Winbond)
128K X 8 CMOS FLASH MEMORY
www.DataSheet4U.com
W29C010 128K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C010 is a 1-megabit, 5-volt only CMOS flash memory organized as 128
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AS9C25128M2036L (Alliance Semiconductor Corporation)
2.5V 256/128K X 36 Synchronous Dual-port SRAM
September 2004 Preliminary Information
®
AS9C25256M2036L AS9C25128M2036L
www.DataSheet4U.com
2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V
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K6R1008C1C-C10 (Samsung semiconductor)
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
K6R1008C1C-C/C-L, K6R1008C1C-I/C-P
Document Title
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industri
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HT6017 (Hi-TrendTechnology)
low-power single-phase smart meters dedicated to 128K chip MCU
HT6X1X
HT6X1X
Tel: 021-51035886 Fax: 021-50277833
Email: sales@hitrendtech.com Web: http://www.hitrendtech.com
http://www.hitrendtech.com
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UPD23128 (NEC)
FULLY DECODED 128K-BIT MASK PROGRAMMABLE READ ONLY MEMORY
NEe
NEe Microcomputers, Inc.
}LPD23128
~rn~[~~~~ffirnW
FULLY DECODED 128K BIT MASK PROGRAMMABLE READ ONLY MEMORY
OESCR I PTION
The NEC IlPD23128
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WSF128K32-xH2x (White Electronic)
128K x 32 SRAM/FLASH MODULE
www.DataSheet4U.com
White Electronic Designs
128KX32 SRAM/FLASH MODULE
FEATURES
■ Access Times of 25ns (SRAM) and 70, 90 and 120ns (FLASH) ■ Packagin
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A28F010 (Intel Corporation)
1024K (128K x 8) CMOS FLASH MEMORY
A28F010 1024K (128K x 8) CMOS FLASH MEMORY
(Automotive)
Y
Automotive Temperature Range b 40 C to a 125 C Flash Memory Electrical Chip-Erase 1 Second
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CY62128V (Cypress Semiconductor)
128K x 8 Static RAM
amily
CY62128V Family
128K x 8 Static RAM
Features
• Low voltage range: — 2.7V–3.6V (CY62128V) — 2.3V–2.7V (CY62128V25) • • • • • — 1.6V–2.0V (CY621
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K6X1008C2D (Samsung semiconductor)
128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised - Deleted 32
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IS61C1024 (Integrated Silicon Solution)
128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024 IS61C1024L
128K x 8 HIGH-SPEED CMOS STATIC RAM
ISSI®
MAY 1999
FEATURES
• High-speed access time: 12, 15, 20, 25 ns • Low active power: 600
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WSF128K16-xxx (White Electronic)
128K X 16 SRAM /FLASH MODULE
www.DataSheet4U.com
WSF128K16-XXX
128Kx16 SRAM/FLASH MODULE, SMD 5962-96900
FEATURES
n n n Access Times of 35ns (SRAM) and 70ns (FLASH) n Access Time
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WSF41632-22XX (White Electronic)
128K x 32 SRAM & 512K x 32 FLASH MIXED MODULE
www.DataSheet4U.com
White Electronic Designs
WSF41632-22XX
PRELIMINARY*
128KX32 SRAM & 512Kx32 FLASH MIXED MODULE
FEATURES
Access times of 25ns (SR
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16 views
M28010 (STMicroelectronics)
1-Mbit 128K x 8 Parallel EEPROM
M28010
1 Mbit (128K x 8) Parallel EEPROM With Software Data Protection
PRELIMINARY DATA
s s
Fast Access Time: 100 ns Single Supply Voltage: – 4.5 V t
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W24100 (Winbond)
128K x 8 CMOS STATIC RAM
Preliminary W24100
GENERAL DESCRIPTION
128K × 8 CMOS STATIC RAM
The W24100 is a normal-speed, very low-power CMOS static RAM organized as 131072 ×
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