128K Datasheet | Specifications & PDF Download

GS71108ATP/J/SJ/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features • Fast access time: 7, 8, 10, 12 ns • CMOS low power operation: 140/120/9

(89 views)

GS71108ATP/J/SJ/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features 128K x 8 1Mb Asynchronous SRAM 7, 8, 10, 12 ns 3.3 V VDD Center VDD an

(88 views)

GS71108ATP/J/SJ/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features 128K x 8 1Mb Asynchronous SRAM 7, 8, 10, 12 ns 3.3 V VDD Center VDD an

(84 views)

M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

(73 views)

www.DataSheet4U.com M2716 NMOS 16K (2K x 8) UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is

(57 views)

SRAM FEATURES • High speed: 12, 15, 17,20,25 and 35ns • High-perfonnance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy

(57 views)

AT27C010/L Features • • • • • • • • • Fast Read Access Time - 45 ns Low Power CMOS Operation 100 µA max. Standby 25 mA max. Active at 5 MHz (AT27C01

(52 views)

IS61C1024 IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM ISSI® MAY 1999 FEATURES • High-speed access time: 12, 15, 20, 25 ns • Low active power: 600

(50 views)

1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w L

(49 views)

28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick Pulse Programming Algorithm 10 ms Typical

(48 views)

M29F010B 1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPER

(48 views)

MIC:RON 1-· ' SRAM FEATURES • High speed: 15*, 17,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Automatic CE power down

(47 views)

NEe NEe Microcomputers, Inc. }LPD23128 ~rn~[~~~~ffirnW FULLY DECODED 128K BIT MASK PROGRAMMABLE READ ONLY MEMORY OESCR I PTION The NEC IlPD23128

(46 views)

M27128A NMOS 128K (16K x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5 V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL CO

(46 views)

(46 views)

Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture –

(45 views)

P4C1024 P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES High Speed (Equal Access and Cycle Times) — 15/17/20/25/35 ns (Commercial) — 20/25/35/45

(44 views)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

(44 views)

SRAM Austin Semiconductor, Inc. 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-89598 •MIL-STD-883 NC A16 A14 A12 A

(43 views)

www.DataSheet4U.com PDM41024 1 Megabit Static RAM 128K x 8-Bit Features n 1 2 3 4 5 6 7 Description The PDM41024 is a high-performance CMOS static

(43 views)