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28F010 - 1024K (128K x 8) CMOS FLASH MEMORY

Description

Symbol A0 A16 DQ0 DQ7 Type INPUT INPUT OUTPUT Name and Function ADDRESS INPUTS for memory addresses Addresses are internally latched during a write cycle DATA INPUT OUTPUT Inputs data during memory write cycles outputs data during memory read cycles The data pins are active high an

Features

  • g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX TM Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Packaging Spec Order 231369) Y Y Y Y Y Y Y Y Y Extended Temperature Options Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write random access nonvolatile memory The 28F010 adds electrical chip-.

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Datasheet Details

Part number 28F010
Manufacturer Intel
File Size 405.78 KB
Description 1024K (128K x 8) CMOS FLASH MEMORY
Datasheet download datasheet 28F010 Datasheet

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Full PDF Text Transcription

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28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Standby Current 0 Watts Data Retention Power Integrated Program Erase Stop Timer Y Y Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface Noise Immunity Features g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX TM Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Pack
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