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FDD390N15ALZ - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

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Key Features

  • RDS(on) = 33.4 m (Typ. ) @ VGS = 10 V, ID = 26 A.
  • RDS(on) = 42.2 m (Typ. ) @ VGS = 4.5 V, ID = 20 A.
  • Fast Switching Speed.
  • Low Gate Charge, QG = 17.6 nC (Typ. ).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD390N15ALZ — N-Channel PowerTrench® MOSFET FDD390N15ALZ N-Channel PowerTrench® MOSFET 150 V, 26 A, 42 m January 2014 Features • RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A • RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 A • Fast Switching Speed • Low Gate Charge, QG = 17.6 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.