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PED905 - P-Channel Enhancement Mode Power MOSFET

Description

The PED905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

  • VDS = -12V,ID = -15A RDS(ON).

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Datasheet Details

Part number PED905
Manufacturer semi one
File Size 186.43 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED905 Datasheet

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Full PDF Text Transcription

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PED905 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PED905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switching application and a wide variety of other applications Bottom Drain Contact D1 6D D2 5D GENERAL FEATURES ● VDS = -12V,ID = -15A RDS(ON) <15mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-2.5V RDS(ON) <45mΩ @ VGS=-1.8V RDS(ON) < 80mΩ @ VGS=-1.
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