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PED8810M - N-Channel Enhancement Mode Power MOSFET

Description

The PED8810M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

Features

  • VDS = 20V,ID =7A RDS(ON) < 25mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PED8810M
Manufacturer semi one
File Size 226.33 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED8810M Datasheet

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Full PDF Text Transcription

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PED8810M N-Channel Enhancement Mode Power MOSFET Description The PED8810M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features ● VDS = 20V,ID =7A RDS(ON) < 25mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.
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