Datasheet4U Logo Datasheet4U.com

PE8910 - N-Channel Enhancement Mode Power MOSFET

Description

The PE8910 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

Features

  • VDS = 30V,ID =11A RDS(ON) < 10m Ω@ V GS=10V RDS(ON) < 14m Ω@ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram Marking and pin assignment.

📥 Download Datasheet

Datasheet Details

Part number PE8910
Manufacturer semi one
File Size 211.54 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8910 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE8050 NPN-PNP General Purpose Complementary Amplifiers & Output Drivers Fairchild Semiconductor
PE80Q04N SBD MODULE Nihon Inter Electronics
PE80QL03N SBD Nihon Inter Electronics
PE8124HM1 N-Channel Enhancement Mode Power MOSFET ChipSourceTek
PE8200 Trimer PE

Other Datasheets by semi one

Part Number Description
PE80H11 N-Channel Enhancement Mode Power MOSFET
PE80H13 N-Channel Enhancement Mode Power MOSFET
PE8200 N-Channel Enhancement Mode Power MOSFET
PE8203 N-Channel Enhancement Mode Power MOSFET
PE8203A N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
PE8910 N-Channel Enhancement Mode Power MOSFET Description The PE8910 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features ● VDS = 30V,ID =11A RDS(ON) < 10m Ω@ V GS=10V RDS(ON) < 14m Ω@ VGS=4.
Published: |