Datasheet4U Logo Datasheet4U.com

NFAM5312SCBUT - 1200V 40A IPM

General Description

The NFAM5312SCBUT is a fully integrated inverter power module consisting of an independent High side gate driver, LVIC, six SiC MOSFET’s and a temperature sensor (VTS or Thermistor), suitable for driving permanent magnet synchronous (PMSM) motors, brushless DC (BLDC) motors and AC asynchrono

Key Features

  • 1200 V 40 A 3.
  • Phase MOSFET Inverter, Including Control ICs for Gate Drive and Protections.
  • Active Logic Interface.
  • Built.
  • in Under.
  • voltage Protection (UVP).
  • Built.
  • in Bootstrap Diodes/Resistors.
  • Separate Low.
  • side MOSFET Source Connections for Individual Current Sensing of Each Phase.
  • Temperature Sensor (VTS Output by LVIC or Thermistor).
  • UL Certification: E209204.
  • This is a Pb.
  • F.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NFAM0512L5BT IPM ON Semiconductor
NFAM2512L7BL Intelligent Power Module ON Semiconductor
NFAM2512SCBUT IPM ON Semiconductor
NFAM3512L7B Intelligent Power Module ON Semiconductor
NFA100-220S05 50-150W Single Output / built-in surge suppression and filtering circuit AC / DC power modules NFA

Other Datasheets by onsemi

Part Number Description
NFAM2065L4B IPM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com Intelligent Power Module (IPM) Inverter, 1200 V, 40 A NFAM5312SCBUT General Description The NFAM5312SCBUT is a fully−integrated inverter power module consisting of an independent High side gate driver, LVIC, six SiC MOSFET’s and a temperature sensor (VTS or Thermistor), suitable for driving permanent magnet synchronous (PMSM) motors, brushless DC (BLDC) motors and AC asynchronous motors. The MOSFET’s are configured in a three−phase bridge with separate source connections for the lower legs for maximum flexibility in the choice of control algorithm. The power stage has undervoltage lockout protection (UVP). Internal bootstrap diodes/resistors are provided for high side control.