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PMV48XPA - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Logic-level compatible.
  • Trench MOSFET technology.
  • Very fast switching.
  • AEC-Q101 qualified 3.

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Datasheet preview – PMV48XPA

Datasheet Details

Part number PMV48XPA
Manufacturer nexperia
File Size 708.89 KB
Description P-channel MOSFET
Datasheet download datasheet PMV48XPA Datasheet
Additional preview pages of the PMV48XPA datasheet.

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Full PDF Text Transcription

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PMV48XPA 20 V, P-channel Trench MOSFET 10 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Trench MOSFET technology • Very fast switching • AEC-Q101 qualified 3. Applications • High-side loadswitch • High-speed line driver • Relay driver • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - - -3.5 A Static characteristics RDSon drain-source on-state VGS = -4.
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