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PMDPB95XNE2 - dual N-channel MOSFET

Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Very fast switching.
  • Trench MOSFET technology.
  • Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm.
  • Exposed drain pad for excellent thermal conduction.
  • EletroStatic Discharge (ESD) protection > 2 kV HBM 3.

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Full PDF Text Transcription

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PMDPB95XNE2 30 V, dual N-channel Trench MOSFET 14 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm • Exposed drain pad for excellent thermal conduction • EletroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Charging switch for portable devices • DC-to-DC converters • Small brushless DC motor drive • Power management in battery-driven portables • Hard disk and computing power management 4. Quick reference data Table 1.
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