Datasheet4U Logo Datasheet4U.com

PMCXB1000UE - N/P-channel MOSFET

Description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Very low threshold voltage for portable.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMCXB900UE N/P-channel Trench MOSFET NXP
PMC100 PMCxx-xx Unit type Cosel
PMC127B-1R0M-N DIP Power Inductors YAGEO
PMC127B-1R5M-N DIP Power Inductors YAGEO
PMC127B-2R2M-N DIP Power Inductors YAGEO

Other Datasheets by nexperia

Part Number Description
PMCXB900UE complementary N/P-channel Trench MOSFET
PMCXB900UEL N/P-channel MOSFET
PMC85XP P-channel MOSFET
PMCA14UN N-channel Trench MOSFET
PMCM4401UNE N-channel Trench MOSFET

Full PDF Text Transcription

Click to expand full text
PMCXB1000UE 30 V, complementary N/P-channel Trench MOSFET 27 June 2016 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Very low threshold voltage for portable applications: VGS(th) = 0.7 V • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Level shifter • Power management in battery-driven portables 4. Quick reference data Table 1.
Published: |