Datasheet4U Logo Datasheet4U.com

PMCA14UN - N-channel Trench MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Very fast switching.
  • Ultra small package: 0.96 × 0.96 × 0.24 mm.
  • Trench MOSFET technology 3.

📥 Download Datasheet

Datasheet Details

Part number PMCA14UN
Manufacturer nexperia
File Size 281.85 KB
Description N-channel Trench MOSFET
Datasheet download datasheet PMCA14UN Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMC100 PMCxx-xx Unit type Cosel
PMC127B-1R0M-N DIP Power Inductors YAGEO
PMC127B-1R5M-N DIP Power Inductors YAGEO
PMC127B-2R2M-N DIP Power Inductors YAGEO
PMC127B-3R3M-N DIP Power Inductors YAGEO

Other Datasheets by nexperia

Part Number Description
PMC85XP P-channel MOSFET
PMCM4401UNE N-channel Trench MOSFET
PMCM4401UPE P-channel MOSFET
PMCM4401VNE N-channel MOSFET
PMCM4401VPE P-channel MOSFET

Full PDF Text Transcription

Click to expand full text
PMCA14UN 12 V, N-channel Trench MOSFET 6 August 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Ultra small package: 0.96 × 0.96 × 0.24 mm • Trench MOSFET technology 3. Applications • Relay driver • Battery management • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.
Published: |