PBSS4112PANP
description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN plement: PBSS4112PAN. PNP/PNP plement: PBSS5112PAP.
1.2 Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain h FE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High efficiency due to less heat generation
- AEC-Q101 qualified
1.3 Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base
IC collector current
ICM peak collector current single pulse; tp ≤ 1 ms
TR1 (NPN)
RCEsat collector-emitter saturation resistance
IC = 500 m A;...
