PBSS4112PAN
description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP plement: PBSS4112PANP. PNP/PNP plement: PBSS5112PAP.
1.2 Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain h FE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
1.3 Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO collector-emitter voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat collector-emitter saturation resistance
Conditions open base single pulse; tp ≤ 1 ms IC = 500 m A; IB = 50 m A; pulsed; tp ≤ 300 µs; δ ≤...
