Datasheet4U Logo Datasheet4U.com

BUK9Y30-75B - N-channel MOSFET

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

  • Low conduction losses due to low on-state resistance.
  • Suitable for logic level gate drive sources.
  • Q101 compliant.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK9Y30-75B N-channel TrenchMOS logic level FET NXP Semiconductors
BUK9Y38-100E MOSFET NXP Semiconductors
BUK9Y3R0-40E N-Channel MOSFET NXP Semiconductors
BUK9Y3R5-40E MOSFET NXP Semiconductors
BUK9Y07-30B N-Channel MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
BUK9Y38-100E N-channel MOSFET
BUK9Y3R0-40E N-channel MOSFET
BUK9Y3R5-40E N-channel MOSFET
BUK9Y07-30B N-channel TrenchMOS standard level FET
BUK9Y09-40B N-channel TrenchMOS logic level FET

Full PDF Text Transcription

Click to expand full text
BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 04 — 10 April 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources „ Q101 compliant „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V, 24 V and 42 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps and solenoids 1.4 Quick reference data Table 1.
Published: |