BUK9Y07-30B Datasheet PDF - nexperia N-channel TrenchMOS standard level FET Specs

BUK9Y07-30B - N-channel TrenchMOS standard level FET

Datasheet Summary

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

Low conduction losses due to low on-state resistance.
Q101 compliant.
Suitable for logic level gate drive sources.
Suitable for thermally demanding environments due to 175 °C rating 1.3.

Datasheet Details

Part number	BUK9Y07-30B
Manufacturer	nexperia
File Size	734.14 KB
Description	N-channel TrenchMOS standard level FET
Datasheet	BUK9Y07-30B Datasheet
Additional preview pages of the BUK9Y07-30B datasheet.

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Full PDF Text Transcription

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BUK9Y07-30B N-channel TrenchMOS logic level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1.

Published: Jun 4, 2019 |