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BUK7Y13-40B - N-channel MOSFET

General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • 175 °C rated.
  • Suitable for standard level gate drive sources.
  • Q101 compliant.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Full PDF Text Transcription for BUK7Y13-40B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK7Y13-40B. For precise diagrams, and layout, please refer to the original PDF.

BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancemen...

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ct profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ 175 °C rated „ Suitable for standard level gate drive sources „ Q101 compliant „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V loads „ Automotive ABS systems „ Fuel pump and injection „ Air bag „ Automotive transmission control „ Motors

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NXP Semiconductors Logo BUK7Y13-40B N-Channel MOSFET NXP Semiconductors

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