BUK7Y12-100E
description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using Trench MOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
- Q101 pliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance
Fig. 11
Dynamic characteristics
QGD gate-drain...
