Full PDF Text Transcription for BUK7607-55B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BUK7607-55B. For precise diagrams, and layout, please refer to the original PDF.
BUK7607-55B N-channel TrenchMOS standard level FET Rev. 2 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancemen...
View more extracted text
ct profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick re
BUK7607-55B Datasheet
