N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation.
Full PDF Text Transcription for BUK7610-55AL (Reference)
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BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 — 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Fiel...
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roduct profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features 175 °C rated Stable operation in linear mode Q101 compliant TrenchMOS technology 1.3 Applications 12 V and 24 V loads DC linear motor control Automotive systems Repetitive clamped inductive switching 1.4 Quick reference data Table 1.
BUK7610-55AL Datasheet
