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20N50 - N-Channel Power MOSFET

General Description

The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max.

threshold voltage of 5 volts.

Key Features

  • RDS(ON) = 0.23Ω@VGS = 10V Ultra low gate charge(60nC max. ) Low reverse transfer capacitance (CRSS = 27pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Source).

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Full PDF Text Transcription for 20N50 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 20N50. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTOR 20N50 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (20A, 500Volts) DESCRIPTION The Nell 20N50 is a three-terminal silicon device with cur...

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DESCRIPTION The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max. threshold voltage of 5 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. D G D S TO-3PB (20N50B) D (Drain) FEATURES RDS(ON) = 0.23Ω@VGS = 10V Ultra low gate charge(60nC max.

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