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20N50. For precise diagrams, and layout, please refer to the original PDF.
N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-sta...
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y. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. 20N50 V DSS RDS(ON ) ID 500V 0.26Ω 20A TO-3P Features • 20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V • Low gate charge (typical 70Nc) • Fast switching • 100% avalanche tested • Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 20N50 TO-3P 0GFD www.goford.
20N50 Datasheet
