Datasheet4U Logo Datasheet4U.com

CSD18535KTT - N-Channel MOSFET

Description

This 60-V, 1.6-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

.

Features

  • 1 Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • D2PAK Plastic Package 2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CSD1833 NPN SILICON EPITAXIAL POWER TRANSISTOR CDIL
CSD10060 ZERO RECOVERY RECTIFIER ETC
CSD10060A ZERO RECOVERY RECTIFIER ETC
CSD10060B ZERO RECOVERY RECTIFIER ETC
CSD10060G ZERO RECOVERY RECTIFIER ETC

Other Datasheets by Texas Instruments

Part Number Description
CSD18535KCS N-Channel MOSFET
CSD18531Q5A N-Channel MOSFET
CSD18532KCS 60V N-Channel MOSFET
CSD18532NQ5B N-Channel MOSFET
CSD18532Q5B N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18535KTT SLPS589 – MARCH 2016 CSD18535KTT 60 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.6-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Drain (Pin 2) Gate (Pin 1) . Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 60 63 10.
Published: |