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CSD18535KCS
SLPS531 – MARCH 2015
CSD18535KCS 60 V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • TO-220 Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier • Motor Control
3 Description
This 60 V, 1.6 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
SPACE
Drain (Pin 2)
Gate (Pin 1)
.
Source (Pin 3)
Product Summary
TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
60
63
10.