Datasheet4U Logo Datasheet4U.com

CSD16570Q5B - 25V N-Channel Power MOSFET

Description

This 25 V, 0.49 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not designed for switching applications.

.

.

Features

  • 1 Extremely Low Resistance.
  • Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package 2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CSD1616 NPN SILICON EPITAXIAL TRANSISTOR Continental Device India Limited
CSD16321Q5 Power MOSFETs Ciclon
CSD16323Q3 Power MOSFET Ciclon
CSD1638 NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR Continental Device India Limited
CSD16401Q5 NexFET Power MOSFETs CICLON

Other Datasheets by Texas Instruments

Part Number Description
CSD16556Q5B 25V N-Channel Power MOSFET
CSD16301Q2 25-V N-Channel Power MOSFET
CSD16321Q5 25-V N-Channel Power MOSFET
CSD16321Q5C N-Channel Power MOSFET
CSD16322Q5 N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD16570Q5B SLPS496A – JULY 2014 – REVISED MAY 2017 CSD16570Q5B 25-V N-Channel NexFET™ Power MOSFET 1 Features •1 Extremely Low Resistance • Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • ORing and Hot Swap Applications 3 Description This 25 V, 0.49 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not designed for switching applications. Top Icon S1 8D S2 7D S3 D G4 . . 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.
Published: |