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CSD16342Q5A - N-Channel Power MOSFET

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.

Features

  • 1.
  • 2 Optimized for 5V Gate Drive.
  • Resistance Rated at VGS = 2.5V.
  • Ultra Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5mm x 6mm Plastic Package.

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Full PDF Text Transcription

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CSD16342Q5A www.ti.com SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16342Q5A RDS(on) - On-State Resistance - mΩ VGS - Gate-to-Source Voltage (V) FEATURES 1 •2 Optimized for 5V Gate Drive • Resistance Rated at VGS = 2.5V • Ultra Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5mm x 6mm Plastic Package APPLICATIONS • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems • Optimized for Control or Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.
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