C1969
Description
The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for mobile radio applications.
Features
- High power gain: Gpe ≥ 12d B @Vcc = 12V, Po = 16W, f = 27MHz
- Emitter ballasted construction for reliability and performance.
- Manufactured incorporating recyclable Ro HS pliant materials.
- Ability to periodically withstand infinite VSWR load when operated @ Vcc = 16V, Po = 20W, f = 27MHz.
Application
10 to 14 watts output power class AB amplifier applications within HF band.
2SC1969
TO-220 Package
Absolute Maximum Ratings (Tc = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Vcbo Vebo Veco Ic
Pc
Tj Tstg Rth-a Rth-c
Collector to base voltage Emitter to base voltage Collector to emitter voltage Collector current
Collector dissipation
Junction temperature Storage temperature
Thermal resistance
Rbe =
Ta = 25°C Tc = 25°C
Junction to ambient Junction to case
Note: Above parameters are...
