C1969
DESCRIPTION
- High Power Gain-
: Gpe≥12d B,f= 27MHz, PO= 16W
- High Reliability
APPLICATIONS
- Designed for 10~14 watts output power class AB amplifiers applications in HF band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage RBE= ∞
VEBO Emitter-Base Voltage
5V
IC Collector Current
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
6A
20 W
150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Rth j-c
Thermal Resistance,Junction to Ambient 73.5 ℃/W
Thermal Resistance,Junction to Case
6.25 ℃/W isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
2SC1969
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
