This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown.
Key Features
High voltage.
Low on-resistance.
Fast switching speed.
Low gate drive.
Low threshold.
SOT223 package variant engineered to increase spacing between
high voltage pins.
Full PDF Text Transcription for ZXMP2120G4 (Reference)
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ZXMP2120G4. For precise diagrams, and layout, please refer to the original PDF.
N) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A SOT23-5 version is also available (ZXMP2120E5). SOT223 FEATURES • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • SOT223 package variant engineered to increase spacing between high voltage pins.
ZXMP2120G4 Datasheet
