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ZXMP2120E5 - 200V P-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown.

Key Features

  • SOT23-5.
  • High voltage.
  • Low on-resistance.
  • Fast switching speed.
  • Low gate drive.
  • Low threshold.
  • SOT23-5 package variant engineered to increase spacing between high voltage pins.

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Full PDF Text Transcription for ZXMP2120E5 (Reference)

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www.DataSheet4U.com ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel...

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N) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A 4 pin SOT223 version is also available (ZXMP2120G4). FEATURES SOT23-5 • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • SOT23-5 package variant engineered to increase spacing between high voltage pins.