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ZXMN6A25N8 - 60V SO8 N-channel MOSFET

General Description

This new generation Trench MOSFET from Zetex

Key Features

  • low on-resistance and fast switching, making it ideal for high efficiency power management.

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Full PDF Text Transcription for ZXMN6A25N8 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ZXMN6A25N8. For precise diagrams, and layout, please refer to the original PDF.

ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (Ω) 0.050 @ VGS=10V 0.070 @ VGS=4.5V ID(A) 7.0 Description This new generation Trench MOS...

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0.070 @ VGS=4.5V ID(A) 7.0 Description This new generation Trench MOSFET from Zetex features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low gate drive • SO8 package Applications • DC-DC Converters • Power management functions • Disconnect switches • Motor control Ordering information Device ZXMN6A25N8TA Reel size (inches) 7 Device marking ZXMN6A25 Tape width (mm) 12 Quantity per reel 500 D G S SD SD SD GD Top view Issue 1 - April 2008 © Zetex Semiconductors plc 2008 1 www.zetex.